AMIS-720649: Contact Image Sensor

Data Sheet

5.3 Wafer Scribe Line

Figure 3 outlines the scribe line dimensions surrounding the sensor die on a wafer.

55µm

55µm

60µm

60µm

15µm

380µm

14560µm

Figure 3: Wafer Scribe Line

6.0 Electro-Optical Specifications

Table 2 lists the electro-optical specifications of the AMIS-720649 sensor at 25

Table 2: Electro-Optical Specifications

Parameter

Symbol

Min.

Typical

Max.

Units

Number of pixels

344

344

Pixel-to-pixel spacing

42.3

42.3

µm

Sensitivity

(1)

Sv

665

V /

Saturation voltage

(2)

Vsat

2.0

V

Photo-response non-uniformity

(3)

Up

7.5

%

Adjacent photo-response non-uniformity

(4)

Upn

7.5

%

Dark output voltage level

(5)

Vd

0.7

V

Dark output non-uniformity

(6)

Ud

100

mV

Random thermal noise (rms)

(7)

Vno

4

mV

Sensor-to-sensor photo-response non-uniformity

(8)

Usensor

7.5

%

Photo response linearity

(9)

PRL

2.0

%

Notes for Table 2 are listed on the next page under “Definitions of Electro-Optical Specifications”.

5

AMI Semiconductor

– Dec. 05, M-20488-001

www.amis.com