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APTGF75H120TG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTGF75H120TG Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 5 page APTGF75H120TG www.microsemi.com 1 - 5 Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 100 IC Continuous Collector Current Tc = 80°C 75 ICM Pulsed Collector Current Tc = 25°C 150 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 500 W RBSOA Reverse Bias Safe Operating Area Tj = 150°C 150A @ 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com VBUS OUT1 OUT2 Q3 Q4 E3 G3 0/VBUS E4 G4 NTC2 G2 E2 NTC1 Q2 Q1 G1 E1 OUT1 OUT2 NTC1 NTC2 G3 E3 VBUS G1 E1 G4 G2 E2 0/VBUS E4 VCES = 1200V IC = 75A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Full - Bridge NPT IGBT Power Module |
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