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APTGF90H60TG Datasheet(PDF) 6 Page - Microsemi Corporation |
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APTGF90H60TG Datasheet(HTML) 6 Page - Microsemi Corporation |
6 / 6 page APTGF90H60TG www.microsemi.com 6 - 6 Cies Cres Coes 100 1000 10000 0 1020304050 Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 0 50 100 150 200 250 0 200 400 600 800 Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current Hard switching ZCS ZVS 0 40 80 120 160 200 20 40 60 80 100 120 IC, Collector Current (A) V CE = 400V D = 50% RG = 5Ω T J = 125°C T C = 75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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