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APTGF100DA120TG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF100DA120TG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTGF100DA120TG www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 350 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 600 µA Tj = 25°C 3.2 3.7 VCE(sat) Collector Emitter Saturation Voltage VGE = 15V IC = 100A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20 V, VCE = 0V 150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 6900 Coes Output Capacitance 660 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 440 pF Qg Total gate Charge 660 Qge Gate – Emitter Charge 70 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 100A 400 nC Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 Ω 30 ns Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 Ω 40 ns Eon Turn-on Switching Energy Tj = 125°C 13.9 Eoff Turn-off Switching Energy VGE = 15V VBus = 600V IC = 100A RG = 2.5 Ω Tj = 125°C 6.1 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600 µA IF DC Forward Current Tc = 70°C 120 A IF = 120A 2.0 2.5 IF = 240A 2.3 VF Diode Forward Voltage IF = 120A Tj = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time Tj = 125°C 470 ns Tj = 25°C 2400 Qrr Reverse Recovery Charge IF = 120A VR = 800V di/dt =400A/µs Tj = 125°C 8000 nC |
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