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APTGF180DH60G Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APTGF180DH60G
Description  Asymmetrical - bridge NPT IGBT Power Module
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF180DH60G Datasheet(HTML) 4 Page - Microsemi Corporation

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APTGF180DH60G
www.microsemi.com
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Typical Performance Curve
Output characteristics (VGE=15V)
T
J=-55°C
T
J=25°C
T
J=125°C
0
100
200
300
400
500
600
012
34
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J=-55°C
T
J=25°C
T
J=125°C
0
100
200
300
400
500
600
0123456789
10
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Ic=360A
Ic=180A
Ic=90A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
T
J = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=360A
Ic=180A
Ic=90A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
0
50
100
150
200
250
300
-50 -25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
V
CE =300V
V
CE =480V
0
2
4
6
8
10
12
14
16
18
0
100
200
300
400
500
600
700
Gate Charge (nC)
I
C = 180A
T
J = 25°C
Output Characteristics (VGE=10V)
T
J=-55°C
TJ=25°C
T
J=125°C
0
100
200
300
400
500
600
01
234
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle


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