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| APTGF300U120DG |
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APTGF300U120DG www.microsemi.com 5 – 5 Forward Characteristic of diode TJ=25°C TJ=125°C 0 100 200 300 400 500 600 00.511.5 22.5 3 VF (V) hard switching ZCS ZVS 0 20 40 60 80 100 0 50 100 150 200 250 300 350 IC (A) VCE=600V D=50% RG=3 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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