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APTGF300U120DG www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 500 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 750 µA Tj = 25°C 3.3 3.9 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 300A Tj = 125°C 4 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 12mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±1 µA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 21 Coes Output Capacitance 2.9 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.52 nF Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω 30 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω 40 ns Eon Turn-on Switching Energy Tj = 125°C 25 Eoff Turn-off Switching Energy VGE = 15V VBus = 600V IC = 300A RG = 3Ω Tj = 125°C 15 mJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 300 A Tj = 25°C 2.1 VF Diode Forward Voltage IF = 300A Tj = 125°C 1.9 V Tj = 25°C 120 trr Reverse Recovery Time Tj = 125°C 210 ns Tj = 25°C 22 Qrr Reverse Recovery Charge Tj = 125°C 43 µC Tj = 25°C 7 Er Reverse Recovery Energy IF = 300A VR = 600V di/dt =4500A/µs Tj = 125°C 15 mJ |
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