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APTGF350DA60G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF350DA60G Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 6 page APTGF350DA60G www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 200 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1750 µA Tj = 25°C 2.0 2.5 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 360A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 4mA 3 5 V IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±300 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 17.2 Coes Output Capacitance 1.88 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.6 nF Qg Total gate Charge 1320 Qge Gate – Emitter Charge 1160 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC = 360A 800 nC Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 150 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 360A RG = 1.25Ω 30 ns Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 170 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 360A RG = 1.25Ω 40 ns Eon Turn-on Switching Energy Tj = 125°C 17.2 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 360A RG = 1.25Ω Tj = 125°C 14 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 750 IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 1500 µA IF DC Forward Current Tc = 80°C 400 A IF = 400A 1.6 1.8 IF = 800A 1.9 VF Diode Forward Voltage IF = 400A Tj = 125°C 1.4 V Tj = 25°C 180 trr Reverse Recovery Time Tj = 125°C 220 ns Tj = 25°C 1560 Qrr Reverse Recovery Charge IF = 400A VR = 400V di/dt =800A/µs Tj = 125°C 5800 nC |
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