APTGT75TA60PG

www.microsemi.com

5 - 5

Forward Characteristic of diode

0

25

50

75

100

125

150

0

0.4

0.8

1.2

1.6

2

2.4

Hard

switching

ZCS

ZVS

0

20

40

60

80

100

120

0

20406080

100

D=50%

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration in Seconds

Diode

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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.