APTGT100DA170TG

www.microsemi.com

4 - 5

Typical Performance Curve

0

25

50

75

100

125

150

175

200

00.5

11.5

2

2.533.5

4

Output Characteristics

0

40

80

120

160

200

0

123

45

Transfert Characteristics

0

25

50

75

100

125

150

175

200

5

6

7

8

9

10

11

12

13

Energy losses vs Collector Current

Eon

Eoff

Er

0

20

40

60

80

100

0

25

50

75 100 125 150 175 200

Eon

Eoff

Er

0

12.5

25

37.5

50

62.5

75

87.5

100

0

5

10

15

20

25

30

35

40

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Reverse Bias Safe Operating Area

0

50

100

150

200

250

0

400

800

1200

1600

2000

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

IGBT