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APTGT100DA170TG Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTGT100DA170TG Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 5 page APTGT100DA170TG www.microsemi.com 4 - 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 0 25 50 75 100 125 150 175 200 00.5 11.5 2 2.533.5 4 VCE (V) Output Characteristics VGE=15V VGE=13V VGE=20V VGE=9V 0 40 80 120 160 200 0 123 45 VCE (V) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C TJ=125°C 0 25 50 75 100 125 150 175 200 5 6 7 8 9 10 11 12 13 VGE (V) Energy losses vs Collector Current Eon Eoff Er 0 20 40 60 80 100 0 25 50 75 100 125 150 175 200 IC (A) VCE = 900V VGE = 15V RG = 4.7Ω TJ = 125°C Eon Eoff Er 0 12.5 25 37.5 50 62.5 75 87.5 100 0 5 10 15 20 25 30 35 40 Gate Resistance (ohms) VCE = 900V VGE =15V IC = 100A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 50 100 150 200 250 0 400 800 1200 1600 2000 VCE (V) VGE=15V TJ=125°C RG=4.7Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) IGBT |
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