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APTGT100DU170TG Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT100DU170TG Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT100DU170TG www.microsemi.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=125°C 0 25 50 75 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 VF (V) hard switching ZCS ZVS 0 5 10 15 20 25 0 20406080 100 120 140 IC (A) VCE=900V D=50% RG=4.7 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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