APTGT150DA60TG

4 - 5

www.microsemi.com

Typical Performance Curve

0

50

100

150

200

250

300

00.511.522.5

3

Output Characteristics

0

50

100

150

200

250

300

00.511.522.533.5

Transfert Characteristics

0

50

100

150

200

250

300

5

678

9

10

11

12

Energy losses vs Collector Current

Eon

Eoff

Er

0

2

4

6

8

10

0

50

100

150

200

250

300

Eon

Eon

Eoff

Eoff

Er

0

2

4

6

8

10

12

0

5

10

15

20

25

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Reverse Bias Safe Operating Area

0

50

100

150

200

250

300

350

0

100 200 300 400 500 600 700

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration in Seconds

IGBT