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APTGT150DU120TG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT150DU120TG Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page APTGT150DU120TG www.microsemi.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA Tj = 25°C 1.7 2.1 VCE(sat) Collector Emitter Saturation Voltage VGE = 15V IC = 150A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 3 mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 10.7 Coes Output Capacitance 0.56 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.48 nF Td(on) Turn-on Delay Time 280 Tr Rise Time 40 Td(off) Turn-off Delay Time 420 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A RG = 2.2Ω 75 ns Td(on) Turn-on Delay Time 290 Tr Rise Time 45 Td(off) Turn-off Delay Time 520 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A RG = 2.2Ω 90 ns Eon Turn-on Switching Energy Tj = 125°C 14 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 150A RG = 2.2Ω Tj = 125°C 16 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 150 A Tj = 25°C 1.6 2.1 VF Diode Forward Voltage IF = 150A Tj = 125°C 1.6 V Tj = 25°C 170 trr Reverse Recovery Time Tj = 125°C 280 ns Tj = 25°C 15 Qrr Reverse Recovery Charge Tj = 125°C 29 µC Tj = 25°C 7 Er Reverse Recovery Energy IF = 150A VR = 600V di/dt =3000A/µs Tj = 125°C 12 mJ |
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