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TDA2615 Datasheet(PDF) 6 Page - NXP Semiconductors |
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TDA2615 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page  1995 May 08 6 Philips Semiconductors Product specification 2 × 6 W hi-fi audio power amplifier TDA2615 CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply ±VP supply voltage range − 12 21 V IORM repetitive peak output current 2.2 −− A Operating position; note 1 ±V P supply voltage range 7.5 12 21 V Iq(tot) total quiescent current RL = ∞ 18 40 70 mA PO output power THD = 0.5% 5 6 − W THD = 10% 6.5 8 − W THD total harmonic distortion PO =4W − 0.15 0.2 % B power bandwidth THD = 0.5%; note 2 − 20 to 20000 − Hz Gv voltage gain 29 30 31 dB G v gain unbalance − 0.2 1 dB Vno noise output voltage note 3 − 70 140 µV Z i input impedance 14 20 26 k Ω SVRR supply voltage ripple rejection note 4 40 60 − dB αcs channel separation RS = 0 46 70 − dB Ibias input bias current − 0.3 −µA ∆V GND DC output offset voltage − 30 200 mV ∆V 4 −6 DC output offset voltage between two channels − 4 150 mV MUTE POSITION (AT IMUTE ≥ 300 µA) VO output voltage VI = 600 mV − 0.3 1.0 mV Z2−7 mute input impedance − 9 − k Ω Iq(tot) total quiescent current RL = ∞ 18 40 70 mA Vno noise output voltage note 3 − 70 140 µV SVRR supply voltage ripple rejection note 4 40 55 − dB ∆VGND DC output offset voltage − 40 200 mV ∆V off offset voltage with respect to operating position − 4 150 mV I2 current if pin 2 is connected to pin 5 −− 6mA Mute position; note 5 ±V P supply voltage range 2 − 5.8 V IP total quiescent current RL = ∞ 930 40 mA VO output voltage VI = 600 mV − 0.3 1.0 mV Vno noise output voltage note 3 − 70 140 µV SVRR supply voltage ripple rejection note 4 40 55 − dB ∆V GND DC output offset voltage − 40 200 mV |
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