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PD57006STR-E Datasheet(PDF) 1 Page - STMicroelectronics

Part # PD57006STR-E
Description  RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD57006STR-E Datasheet(HTML) 1 Page - STMicroelectronics

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August 2006
Rev 1
1/22
22
PD57006-E
PD57006S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 6W with 15dB gain @ 945MHz / 28V
■ New RF plastic package
Description
The PD57006 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. PD57006 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD57006’s superior linearity performance makes
it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
www.st.com
Order codes
Part number
Package
Packing
PD57006-E
PowerSO-10RF (formed lead)
Tube
PD57006S-E
PowerSO-10RF (straight lead)
Tube
PD57006TR-E
PowerSO-10RF (formed lead)
Tape and reel
PD57006STR-E
PowerSO-10RF (straight lead)
Tape and reel


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