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APTM10AM05FTG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTM10AM05FTG Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 6 page APTM10AM05FTG www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 100V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 80V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 125A 4.5 5 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 2 4 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 20 Coss Output Capacitance 8 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 2.9 nF Qg Total gate Charge 700 Qgs Gate – Source Charge 120 Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID = 250A 360 nC Td(on) Turn-on Delay Time 80 Tr Rise Time 165 Td(off) Turn-off Delay Time 280 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 250A RG = 2.5 Ω 135 ns Eon Turn-on Switching Energy 1.1 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, RG =2.5Ω 1.2 mJ Eon Turn-on Switching Energy 1.22 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, RG = 2.5Ω 1.28 mJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 278 IS Continuous Source current (Body diode) Tc = 80°C 207 A VSD Diode Forward Voltage VGS = 0V, IS = - 250A 1.3 V dv/dt Peak Diode Recovery 5 V/ns Tj = 25°C 190 trr Reverse Recovery Time Tj = 125°C 370 ns Tj = 25°C 0.8 Qrr Reverse Recovery Charge IS = - 250A VR = 50V diS/dt = 200A/µs Tj = 125°C 3.4 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 278A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C |
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