APTM10AM05FTG

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Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

200

Zero Gate Voltage Drain Current

1000

µA

Drain – Source on Resistance

4.5

5

m

Ω

Gate Threshold Voltage

2

4

V

Gate – Source Leakage Current

±200

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

20

Output Capacitance

8

Reverse Transfer Capacitance

f = 1MHz

2.9

nF

Total gate Charge

700

Gate – Source Charge

120

Gate – Drain Charge

360

nC

Turn-on Delay Time

80

Rise Time

165

Turn-off Delay Time

280

Fall Time

Inductive switching @ 125°C

135

ns

Turn-on Switching Energy

1.1

Turn-off Switching Energy

Inductive switching @ 25°C

1.2

mJ

Turn-on Switching Energy

1.22

Turn-off Switching Energy

Inductive switching @ 125°C

1.28

mJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

278

Continuous Source current

(Body diode)

Tc = 80°C

207

A

Diode Forward Voltage

1.3

V

dv/dt

Peak Diode Recovery

5

V/ns

190

Reverse Recovery Time

370

ns

0.8

Reverse Recovery Charge

3.4

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

di/dt

≤ 200A/µs