APTM10HM09FT3G datasheet(2/6 Pages) MICROSEMI

Part #	APTM10HM09FT3G

Description	Full - Bridge MOSFET Power Module

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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APTM10HM09FT3G

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS = 100V

Tj = 25°C

100

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 80V

Tj = 125°C

500

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 69.5A

9

10

m

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 2.5mA

2

4

V

IGSS

Gate – Source Leakage Current

VGS = ±30 V, VDS = 0V

±100

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

9875

Coss

Output Capacitance

3940

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

1470

pF

Qg

Total gate Charge

350

Qgs

Gate – Source Charge

60

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 50V

ID =139A

180

nC

Td(on)

Turn-on Delay Time

35

Tr

Rise Time

70

Td(off)

Turn-off Delay Time

95

Tf

Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 66V

ID = 139A

RG = 5Ω

125

ns

Eon

Turn-on Switching Energy

552

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 15V, VBus = 66V

ID = 139A, RG = 5Ω

604

µJ

Eon

Turn-on Switching Energy

608

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 15V, VBus = 66V

ID = 139A, RG = 5Ω

641

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

139

IS

Continuous Source current

(Body diode)

Tc = 80°C

100

A

VSD

Diode Forward Voltage

VGS = 0V, IS = - 139A

1.3

V

dv/dt

Peak Diode Recovery

8

V/ns

Tj = 25°C

190

trr

Reverse Recovery Time

Tj = 125°C

370

ns

Tj = 25°C

0.4

Qrr

Reverse Recovery Charge

IS = - 139A

VR = 66V

diS/dt = 100A/µs

Tj = 125°C

1.7

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 139A

di/dt

≤ 700A/µs

VR ≤ VDSS

Tj ≤ 150°C

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