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APTM20AM06SG www.microsemi.com 6 - 6 Delay Times vs Current td(on) td(off) 10 20 30 40 50 60 70 80 90 100 150 200 250 300 350 400 450 500 ID, Drain Current (A) VDS=133V RG=0.8Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 100 120 140 160 100 150 200 250 300 350 400 450 500 ID, Drain Current (A) VDS=133V RG=0.8Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 500 1000 1500 2000 2500 3000 3500 4000 100 150 200 250 300 350 400 450 500 ID, Drain Current (A) VDS=133V RG=0.8Ω TJ=125°C L=100µH Eon Eoff Eoff 1000 2000 3000 4000 5000 6000 0 2468 10 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=133V ID=300A TJ=125°C L=100µH Hard switching ZCS ZVS 0 50 100 150 200 250 300 350 400 30 60 90 120 150 180 210 240 270 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=133V D=50% RG=0.8Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 1 10 100 1000 10000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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