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| APTM20AM06SG |
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APTM20AM06SG www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 150A 6 7.2 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 18.5 Coss Output Capacitance 6.03 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.58 nF Qg Total gate Charge 325 Qgs Gate – Source Charge 144 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 300A 156 nC Td(on) Turn-on Delay Time 28 Tr Rise Time 56 Td(off) Turn-off Delay Time 81 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 0.8Ω 99 ns Eon Turn-on Switching Energy 1543 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω 1517 µJ Eon Turn-on Switching Energy 2027 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 0.8Ω 1770 µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 600 µA IF DC Forward Current Tc = 85°C 120 A IF = 120A 1.1 1.15 IF = 240A 1.4 VF Diode Forward Voltage IF = 120A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time Tj = 125°C 60 ns Tj = 25°C 120 Qrr Reverse Recovery Charge IF = 120A VR = 133V di/dt = 400A/µs Tj = 125°C 500 nC |
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