APTM20DUM10TG datasheet(2/6 Pages) MICROSEMI

Part #	APTM20DUM10TG

Description	Dual common source MOSFET Power Module

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Manufacturer	MICROSEMI [Microsemi Corporation]

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APTM20DUM10TG

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VGS = 0V,VDS = 200V

Tj = 25°C

200

IDSS

Zero Gate Voltage Drain Current

VGS = 0V,VDS = 160V

Tj = 125°C

1000

µA

RDS(on)

Drain – Source on Resistance

VGS = 10V, ID = 87.5A

10

12

m

Ω

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 5mA

3

5

V

IGSS

Gate – Source Leakage Current

VGS = ±30 V, VDS = 0V

±150

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input Capacitance

13.7

Coss

Output Capacitance

4.36

Crss

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1MHz

0.19

nF

Qg

Total gate Charge

224

Qgs

Gate – Source Charge

86

Qgd

Gate – Drain Charge

VGS = 10V

VBus = 100V

ID = 150A

94

nC

Td(on)

Turn-on Delay Time

28

Tr

Rise Time

56

Td(off)

Turn-off Delay Time

81

Tf

Fall Time

Inductive switching @ 125°C

VGS = 15V

VBus = 133V

ID = 150A

RG = 2.5Ω

99

ns

Eon

Turn-on Switching Energy

926

Eoff

Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 15V, VBus = 133V

ID = 150A, RG = 2.5Ω

910

µJ

Eon

Turn-on Switching Energy

1216

Eoff

Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 15V, VBus = 133V

ID = 150A, RG = 2.5Ω

1062

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

175

IS

Continuous Source current

(Body diode)

Tc = 80°C

131

A

VSD

Diode Forward Voltage

VGS = 0V, IS = - 150A

1.3

V

dv/dt

Peak Diode Recovery

5

V/ns

trr

Reverse Recovery Time

284

ns

Qrr

Reverse Recovery Charge

IS = - 150A, VR = 133V

diS/dt = 200A/µs

6.1

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

IS ≤ - 175A

di/dt

≤ 700A/µs

VR ≤ VDSS

Tj ≤ 150°C

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