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APTM20SKM08TG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTM20SKM08TG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTM20SKM08TG www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 375 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 1500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 104A 8 10 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14.4 Coss Output Capacitance 4.66 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.29 nF Qg Total gate Charge 280 Qgs Gate – Source Charge 106 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 208A 134 nC Td(on) Turn-on Delay Time 32 Tr Rise Time 64 Td(off) Turn-off Delay Time 88 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A RG = 2.5Ω 116 ns Eon Turn-on Switching Energy 1698 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1858 µJ Eon Turn-on Switching Energy 1872 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω 1972 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 500 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 750 µA IF DC Forward Current Tc = 80°C 180 A IF = 180A 1.1 1.15 IF = 360A 1.4 VF Diode Forward Voltage IF = 180A Tj = 125°C 0.9 V Tj = 25°C 31 trr Reverse Recovery Time Tj = 125°C 60 ns Tj = 25°C 180 Qrr Reverse Recovery Charge IF = 180A VR = 133V di/dt = 600A/µs Tj = 125°C 750 nC |
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