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APTM50DDA10T3G Datasheet(PDF) 6 Page - Microsemi Corporation

Part # APTM50DDA10T3G
Description  Dual Boost chopper MOSFET Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50DDA10T3G Datasheet(HTML) 6 Page - Microsemi Corporation

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APTM50DDA10T3G
www.microsemi.com
6 - 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
10
20
30
40
50
60
70
ID, Drain Current (A)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
10
20
30
40
50
60
70
ID, Drain Current (A)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
5
1015202530
35
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
0.4
0.8
1.2
1.6
2
10
20
30
40
50
60
ID, Drain Current (A)
VDS=333V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
0.5
1
1.5
2
2.5
0
1020304050
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=333V
ID=35A
TJ=125°C
L=100µH
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.


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