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APTM120U10SAG Datasheet(PDF) 6 Page - Microsemi Corporation

Part # APTM120U10SAG
Description  Single switch Series & parallel diodes MOSFET Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10SAG Datasheet(HTML) 6 Page - Microsemi Corporation

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APTM120U10SAG
www.microsemi.com
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Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
30
60
90
120
150
180
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
30
60
90
120
150
180
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
4
8
12
16
30
60
90
120
150
180
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Eon
Eoff
4
8
12
16
20
24
024
68
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=800V
ID=116A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
30
50
70
90
110
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.


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