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APTM120U10SAG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTM120U10SAG
Description  Single switch Series & parallel diodes MOSFET Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10SAG Datasheet(HTML) 1 Page - Microsemi Corporation

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APTM120U10SAG
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D
Q1
G
S
CR1
SK
D
S
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
116
ID
Continuous Drain Current
Tc = 80°C
86
IDM
Pulsed Drain current
464
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
120
m
PD
Maximum Power Dissipation
Tc = 25°C
3290
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3200
mJ
VDSS = 1200V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
AlN substrate for MOSFET improved thermal
performance
Benefits
Outstanding performance at
high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Single switch
Series & parallel diodes
MOSFET Power Module


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