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SPC6332 Datasheet(PDF) 3 Page - SYNC POWER Crop. |
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SPC6332 Datasheet(HTML) 3 Page - SYNC POWER Crop. |
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3 / 11 page  2007/04/25 Ver.1 Page 3 SPC6332 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) ℃ Parameter Symbol Conditions Min. Typ Max. Unit Static VGS=0V,ID= 250uA N-Ch 20 Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA P-Ch -20 VDS=VGS,ID=250uA N-Ch 0.35 1.0 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA P-Ch -0..35 -1.0 V VDS=0V,VGS=±12V N-Ch 100 Gate Leakage Current IGSS VDS=0V,VGS=±12V P-Ch -100 nA VDS= 20V,VGS=0V N-Ch 1 VDS=-20V,VGS=0V P-Ch 1 VDS= 20V,VGS=0V TJ=55℃ N-Ch 5 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V TJ=55℃ P-Ch 5 uA VDS≥ 4.5V,VGS =5V N-Ch 2 On-State Drain Current ID(on) VDS≤ -4.5V,VGS =-5V P-Ch -2 A VGS=4.5V,ID=0.95A N-Ch 0.26 0.38 VGS=-4.5V,ID=-1.0A P-Ch 0.42 0.52 VGS=2.5V,ID=0.75A N-Ch 0.32 0.45 VGS=-2.5V,ID=-0.8A P-Ch 0.58 0.70 VGS=1.8V,ID=0.65A N-Ch 0.42 0.80 Drain-Source On-Resistance RDS(on) VGS=-1.8V,ID=-0.5A P-Ch 0.75 0.95 Ω VDS=10V,ID=1.2A N-Ch 2.6 Forward Transconductance gfs VDS=-10V,ID=-1.0A P-Ch 1.5 S IS=0.5A,VGS=0V N-Ch 0.8 1.2 Diode Forward Voltage VSD IS=-0.5A,VGS=0V P-Ch -0.8 -1.2 V Dynamic N-Ch 1.2 2.0 Total Gate Charge Qg P-Ch 1.1 1.8 N-Ch 0.2 Gate-Source Charge Qgs P-Ch 0.3 N-Ch 0.3 Gate-Drain Charge Qgd N-Channel VDS=10V,VGS=4.5V, ID≡1.2A P-Channel VDS=-10V,VGS=-4.5V ,ID≡-1.0A P-Ch 0.2 nC N-Ch 15 25 td(on) P-Ch 18 30 N-Ch 20 30 Turn-On Time tr P-Ch 25 40 N-Ch 25 40 td(off) P-Ch 20 30 N-Ch 12 20 Turn-Off Time tf N-Channel VDD=10V,RL=20Ω ,ID≡0.5A VGEN=4.5V ,RG=6Ω P-Channel VDD=-10V,RL=20Ω ,ID≡-0.5A VGEN=-4.5V ,RG=6Ω P-Ch 12 20 nS |
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