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IGBT Module
Characteristics (Representative)
6MBI450U-120
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
VGE=0V, f= 1M Hz, Tj= 25°C
Vcc=600V, Ic=450A, Tj= 25°C
0
200
400
600
800
1000
1200
01
23
45
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
200
400
600
800
1000
1200
01
23
45
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
200
400
600
800
1000
1200
012
34
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
101520
25
Gate - Emitter voltage : VGE [ V ]
Ic=900A
Ic=450A
Ic=225A
0.1
1.0
10.0
100.0
1000.0
010
20
30
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
500
1000
1500
2000
2500
Gate charge : Qg [ nC ]
VGE
VCE
0
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