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LX1972IBC Datasheet(PDF) 4 Page - Microsemi Corporation |
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LX1972IBC Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 9 page LX1972 PRODUCTION SPECIFICATION Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 Ambient Light Detector Copyright © 2004 Rev. 1.1b, 2005-10-31 TM ® ELECTRICAL CHA RACTERISTICS Unless otherwise specified, the following specifications apply over the operating ambient temperature -40 °C ≤ T A ≤ 85°C except where otherwise noted and the following test conditions: See Note 1, VDD =5V, RSS = 10K LX1972 Parameter Symbol Test Conditions Min Typ Max Units RESPONSE Peak Spectral Response λPR 520 nm Infrared Response ) ( I ) ( I PR DD DD λ λ EV(550nm) = 292μW/cm 2, Current responsivity change with additional direct light input of 292 μW/cm2 at 910nm, Note 3 5 1 5 % EV = 14.6μW/cm 2, ISS = 10μA 1.2 1.4 EV = 146μW/cm 2, ISS = 100μA 1.8 2.1 Minimum Operational Voltage VDD-VSS EV = 292μW/cm 2, ISS = 200μA 2.2 2.6 V EV = 14.6μW/cm 2, Note 2 7.5 10 12.5 EV = 146μW/cm 2, Note 2 75 100 125 Light Current ISS EV = 292μW/cm 2, Note 2; 150 200 250 μA Gain Linearity 14.6 μW/cm2 ≤ EV ≤ 146μW/cm2 @ 25°C -15 15 % EV = 0μW/cm 2, TA = 25°C 0.010 50 Dark Current IDD(DARK) EV = 0μW/cm 2 200 nA Power Supply Rejection Ratio PSRR VRIPPLE = 10mVP-P, f = 10kHz -25 dB Radiant Sensitive Area 0.04 mm 2 Notes: 1. The input irradiance (EV) is supplied from a white light-emitting diode (LED) optical source adjusted to impose the specified EV at a peak λ = 550nm. 2. See Figure 1. 3. See Figure 2. TE ST CI RCUIT S LX1972 V SS V DD White LED 10k Ω Figure 1 – Operational Voltage Measurement Circuit LX1972 V SS V DD White LED 910nm 10k Ω Figure 2 – IR Sensitivity Measurement Circuit |
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