Electronic Components Datasheet Search |
|
MRF8372G Datasheet(PDF) 1 Page - Advanced Power Technology |
|
MRF8372G Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 3 page Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF8372, R1, R2 MRF8372G, R1, R2 Rev A 9/2005 * G Denotes RoHS Compliant, Pb Free Terminal Finish R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 16 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3 V IC Collector Current 200 mA PD Total Device Dissipation @ TC = 50ºC 2.2 W TSTG Storage Junction Temperature Range -65 to +150 ºC Thermal Data RTH(J-C) Thermal Resistance Junction-Case 45 °C/W SO-8 Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60% Typical • Cost Effective SO-8 package RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Similar Part No. - MRF8372G |
|
Similar Description - MRF8372G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |