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TDA5145 Datasheet(PDF) 7 Page - NXP Semiconductors

Part No. TDA5145
Description  Brushless DC motor drive circuit
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 7 page
background image
June 1994
7
Philips Semiconductors
Product specification
Brushless DC motor drive circuit
TDA5145
MOT0; centre tap
VI
input voltage
−0.5
VVMOT
V
II
input bias current
0.5 V
< VI < VVMOT − 1.5 V −10
−−µA
VCSW
comparator switching level
note 3
±20
±25
±30
mV
∆V
CSW
variation in comparator switching
levels
−−
3mV
Vhys
comparator input hysteresis
75
−µV
MOT1, MOT2 and MOT3; see Fig.5
VDO
drop-out output voltage
IO = 100 mA
0.9
1.05
V
IO = 1000 mA
1.6
1.85
V
∆V
OL
variation in saturation voltage
between lower transistors
IO = 100 mA
−−
180
mV
∆V
OH
variation in saturation voltage
between upper transistors
IO = −100 mA
−−
180
mV
ILIM
current limiting
VVMOT = 10 V; RO = 1.2 Ω 1.8
2.0
2.5
A
tr
rise time switching output
VVMOT = 15 V; see Fig.6
5
10
15
µs
tf
fall time switching output
VVMOT = 15 V; see Fig.6
10
15
20
µs
VDHF
diode forward voltage (diode DH)IO = −500 mA;
notes 4 and 5; see Fig.1
−−
1.5
V
VDLF
diode forward voltage (diode DL)IO = 500 mA;
notes 4 and 5; see Fig.1
−1.5
−−
V
IDM
peak diode current
note 5
−−
2.5
A
+AMP IN and
−AMP IN
VI
input voltage
−0.3
VP − 1.7
V
differential mode voltage without
‘latch-up’
−−
±V
P
V
Ib
input bias current
−−
650
nA
CI
input capacitance
4
pF
Voffset
input offset voltage
−−
10
mV
AMP OUT (open collector)
Isink
output sink current
40
−−
mA
Vsat
saturation voltage
II =40mA
1.5
2.1
V
VO
output voltage
−0.5
+18
V
SR
slew rate
RL = 330 Ω; CL =50pF
60
mA/
µs
Gtr
transfer gain
0.3
−−
S
DIR
VIH
HIGH level input voltage
4 V < VP < 18 V
2.0
−−
V
VIL
LOW level input voltage
4 V < VP <18V
−−
0.8
V
IIL
LOW level input current
−−20
−µA
IIH
HIGH level input current
20
−µA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT




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