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TDA5145TS Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. TDA5145TS
Description  Brushless DC motor drive circuit
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 6 page
background image
1998 Oct 27
6
Philips Semiconductors
Product specification
Brushless DC motor drive circuit
TDA5145TS
CHARACTERISTICS
VP = 14.5 V; Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
note 1
4
18
V
IP
supply current
note 2
6.8
7.8
mA
Vi(VMOT)
input voltage to the output driver
stages
see Fig.1
1.7
16
V
Thermal protection
TSD
local temperature at temperature
sensor causing shut-down
130
140
150
°C
∆T
reduction in temperature before
switch-on
after shut-down
TSD − 30 −
K
MOT0; centre tap
Vi
input voltage
−0.5
VVMOT
V
Ibias
input bias current
0.5 V < Vi <VVMOT − 1.5 V −10
−−µA
VCSW
comparator switching level
note 3
±20
±25
±30
mV
∆VCSW
variation in comparator switching
levels
−−
3mV
Vhys
comparator input hysteresis
75
−µV
MOT1, MOT2 and MOT3; see Fig.4
VDO
drop-out output voltage
Io = 100 mA
0.9
1.05
V
Io = 1000 mA
1.6
1.85
V
∆V
sat(lt)
variation in saturation voltage
between lower transistors
Io = 100 mA
−−
180
mV
∆Vsat(ut)
variation in saturation voltage
between upper transistors
Io = −100 mA
−−
180
mV
ILIM
current limiting
VVMOT =10V; Ro = 1.2 Ω
1.8
2.0
2.5
A
tr
rise time switching output
VVMOT = 15 V; see Fig.5
5
10
15
µs
tf
fall time switching output
VVMOT = 15 V; see Fig.5
10
15
20
µs
VdF(DH)
diode forward voltage (diode DH)Io = −500 mA;
notes 4 and 5; see Fig.1
−−
1.5
V
VdF(DL)
diode forward voltage (diode DL)Io = 500 mA;
notes 4 and 5; see Fig.1
−1.5
−−
V
IdM
peak diode current
note 5
−−
2.5
A
DIR
VIH
HIGH-level input voltage
4V<VP < 18 V
2.0
−−
V
VIL
LOW-level input voltage
4V<VP <18V
−−
0.8
V
IIL
LOW-level input current
−−20
−µA
IIH
HIGH-level input current
20
−µA




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