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TDA5737M Datasheet(PDF) 7 Page - NXP Semiconductors |
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TDA5737M Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 28 page 1997 Feb 24 7 Philips Semiconductors Product specification 5 V VHF, hyperband and UHF mixers/oscillators for TV and VCR 3-band tuners TDA5736; TDA5737 CHARACTERISTICS VP =5V; Tamb =25 °C; measured in circuit of Fig.17; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage 4.5 5.0 5.5 V IP supply current 42 50 58 mA VSW switching voltage depending on supply voltage VP band A; note 1 0 − 0.18VP V band B; note 1 0.26VP − 0.47VP V band C; note 1 0.55VP − VP V ISW switching current band A; note 1 −− 2 µA band B; note 1 −− 10 µA band C; note 1 −− 25 µA Band A mixer (including IF amplifier) fRF frequency range note 2 41 − 171 MHz Gv voltage gain fRF = 50 MHz; see Fig.4; note 3 20.5 23.0 25.5 dB fRF = 170 MHz; see Fig.4; note 3 20.5 23.0 25.5 dB NF noise figure fRF = 50 MHz; see Figs.5 and 6 − 7.5 9 dB fRF = 170 MHz; see Figs.5 and 6 − 910 dB Vo output voltage level causing 1% cross modulation in channel fRF = 50 MHz; see Fig.7 115 118 − dB µV fRF = 170 MHz; see Fig.7 113 116 − dB µV Vi input voltage level causing 10 kHz pulling in channel fRF = 170 MHz; note 4 96 100 − dBmV gos optimum source conductance for noise figure fRF =50MHz − 0.5 − mS fRF = 170 MHz − 1.1 − mS Yi input admittance fRF = 50 to 170 MHz; see Fig.12 − 0.3 − mS Ci input capacitance fRF = 50 to 170 MHz; see Fig.12 − 1.9 − pF Band A oscillator fosc frequency range 0.45 V < Vt < 28 V; notes 1 and 5 80 − 210 MHz fshift frequency shift ∆Vp = 5%; note 6 −− 53 kHz fdrift frequency drift with no compensation ∆T=25 °C; NP0 capacitors; note 7 −− 650 kHz 5 s to 15 mins after switch on; NP0 capacitors; note 8 −− 250 kHz frequency drift with compensation ∆T=25 °C; notes 7 and 9; see Fig.18 −− 500 kHz 5 s to 15 mins after switch on; notes 8 and 9; see Fig.18 −− 100 kHz Vripple ripple susceptibility of supply voltage (peak-to-peak value) fosc = 80 MHz; 4.75 V < VP < 5.25 V; see Fig.8 20 −− mV fosc = 210 MHz; 4.75 V < VP < 5.25 V; see Fig.8 20 −− mV Φ N phase noise measured at the IF output at 10 kHz offset; Vo = 105 dBµV 81 −− dBc/Hz |
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