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SG50N06T, SG50N06DT
Discrete IGBTs
Symbol
Test Conditions
Unit
min.
typ.
max.
gts
IC=IC90; VCE=10V
25
35
S
Pulse test, t
300us, duty cycle
2%
Cies
4000
Coes
VCE=25V; VGE=0V; f=1MHz
340
pF
Cres
100
Qg
110
Qge
IC=IC90; VGE=15V; VCE=0.5VCES
30
nC
Qgc
40
td(on)
Inductive load, TJ=25
oC
50
ns
tri
IC=IC90; VGE=15V
50
ns
VCE=0.8VCES; RG=Roff=2.7
td(off)
Remarks:Switching times may increase
200
300
ns
tfi
for VCE(Clamp)
0.8VCES' higher TJ or
150
270
ns
Eoff
increased RG
3.0
6.0
mJ
td(on)
Inductive load, TJ=25
oC
50
ns
tri
IC=IC90; VGE=15V
50
ns
Eon
VCE=0.8VCES; RG=Roff=2.7
2
mJ
td(off)
Remarks:Switching times may increase
280
ns
tfi
for VCE(Clamp)
0.8VCES' higher TJ or
250
ns
Eoff
increased RG
4.2
mJ
RthJC
0.62
K/W
RthCK
0.25
K/W
(TJ=25
oC, unless otherwise specified)
Characteristic Values
Reverse Diode (FRED)
Symbol
Test Conditions
Unit
min.
typ.
max.
VF
IF=IC90; VGE=0V;
V
Pulse test; t
300ms, duty cycle
22%
2.5
IRM
IF=IC90; VGE=0V; -diF/dt=100A/ms
VR=100V;
2
2.5
A
trr
IF=1A; -di/dt=200A/ms; VR=30V
35
ns
RthJC
0.65
K/W
Characteristic Values
(TJ=25
oC, unless otherwise specified)
180
50
100
175
50
ns