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MH8V644AWZJ-5 Datasheet(PDF) 9 Page - Mitsubishi Electric Semiconductor

Part # MH8V644AWZJ-5
Description  FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MH8V644AWZJ-5 Datasheet(HTML) 9 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
MH8V644AWZJ -5, -6
Preliminary Spec.
MITSUBISHI
ELECTRIC
25/Feb./1997
FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM
MIT-DS-0120-0.0
(
/ 20 )
Specifications subject to
change without notice.
9
Fast Page Mode Cycle (Read, Early Write, Read -Write, Read-Modify-Write Cycle) (Note 24)
Note 24: All previously specified timing requirements and switching characteristics are applicable to their respective Fast page mode cycle.
25: tRAS(min) is specified as two cycles of /CAS input are performed.
26: tCP(max) is specified as a reference point only. If tCP
≥ tCP(max),access time is controlled exclusively by tCAC.
Limits
Parameter
Symbol
Min
Max
(Note25)
(Note26)
15
51200
/CAS before /RAS Refresh Cycle (Note 27)
Limits
Parameter
Symbol
Unit
Min
Max
Note 27: Eight or more /CAS before /RAS cycles instead of eight /RAS cycles are necessary for proper operation of /CAS before /RAS refresh
mode.
-6
-6
Unit
ns
ns
ns
ns
ns
ns
tPC
tPRWC
tRAS
tCP
tCPRH
tCPWD
Fast page mode read/write cycle time
/RAS low pulse width for read write cycle
/CAS high pulse width
/RAS hold time after /CAS precharge
Delay time, /CAS precharge to W low
Fast page mode read write/read modify write cycle time
35
40
100
10
35
75
(Note23)
ns
ns
ns
ns
tCSR
tCHR
tRSR
tRHR
/CAS setup time before /RAS low
/CAS hold time after /RAS low
Read setup time before /RAS low
Read hold time after /RAS low
10
10
10
10
Min
Max
10
51200
-5
30
35
85
5
30
70
Min
Max
-5
5
10
10
10
Read-Write and Read-Modify-Write Cycles
Limits
Parameter
Symbol
Unit
Min
Max
-6
(Note22)
(Note23)
Read write/read modify write cycle time
/RAS low pulse width
/CAS low pulse width
/CAS hold time after /RAS low
/RAS hold time after /CAS low
Read setup time before /CAS low
Delay time, /CAS low to /W low
Delay time, /RAS low to /W low
/CAS hole time after /W low
tRWC
tRAS
tCAS
tCSH
tRSH
tRCS
tCWD
tRWD
tAWD
tCWL
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(Note23)
(Note23)
10000
10000
50
150
50
95
0
30
75
45
15
95
Note 22: tRWC is specified as tRWC(min)=tRAC(max)+tODD(min)+tRWL(min)+tRP(min)+4tT.
23:tWCS, tCWD,tRWD ,tAWD and,tCPWD are specified as reference points only. If tWCS
≥tWCS(min) the cycle is an early write cycle and the DQ pins will remain
high impedance throughout the entire cycle. If tCWD
≥tCWD(min), tRWD≥tRWD (min), tAWD≥tAWD(min) and tCPWD ≥tCPWD(min) (for Fast page mode cycle only),
the cycle is a read-modify-write cycle and the DQ will contain the data read from the selected address. If neither of the above condition (delayed write) is
satisfied,the DQ (at access time and until /CAS or /OE goes back to VIH) is indeterminate.
Delay time, address to /W low
Min
Max
-5
10000
10000
50
130
50
85
0
30
65
40
15
85
/RAS hold time after /W low
Write pulse width
Data setup time before /W loe
/OE hold time after /W low
tRWL
tWP
tDS
tDH
tOEH
ns
ns
ns
ns
ns
15
10
0
10
15
Data hold time after /W low
15
10
0
10
10


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