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K9F2G08UXA Datasheet(PDF) 3 Page - Samsung semiconductor |
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K9F2G08UXA Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 44 page FLASH MEMORY 3 K9F2G08U0A K9F2G08R0A GENERAL DESCRIPTION FEATURES • Voltage Supply - 1.65V ~ 1.95V - 2.70V ~ 3.60V • Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25 µs(Max.) - Serial Access : 25ns(Min.) (*K9F2G08R0A: tRC = 42ns(Min)) 256M x 8 Bit NAND Flash Memory • Fast Write Cycle Time - Page Program time : 200 µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years • Command Driven Operation • Intelligent Copy-Back with internal 1bit/528Byte EDC • Unique ID for Copyright Protection • Package : - K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE 63 - Ball FBGA I (10 x 13 / 0.8 mm pitch) - K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F2G08U0A-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch) Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost- effective solution for the solid state application market. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com- mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A ′s extended reli- ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. PRODUCT LIST Part Number Vcc Range Organization PKG Type K9F2G08R0A-J 1.65 ~ 1.95V X8 FBGA K9F2G08U0A-P 2.70 ~ 3.60V TSOP1 K9F2G08U0A-I 52ULGA |
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