NAND512W4A2CZA6E datasheet(1/51 Pages) STMICROELECTRONICS

Part #	NAND512W4A2CZA6E

Description	512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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1 / 51 page

February 2007

Rev 1

1/51

1

NAND512R3A2C NAND512R4A2C

NAND512W3A2C NAND512W4A2C

512 Mbit, 528 Byte/264 Word Page,

1.8V/3V, NAND Flash Memories

Features

●

High density NAND Flash memories

–

512 Mbit memory array

–

Cost effective solutions for mass

storage applications

●

NAND interface

–

x8 or x16 bus width

–

Multiplexed Address/ Data

●

Supply voltage: 1.8V, 3.0V

●

Page size

–

x8 device: (512 + 16 spare) Bytes

–

x16 device: (256 + 8 spare) Words

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Block size

–

x8 device: (16K + 512 spare) Bytes

–

x16 device: (8K + 256 spare) Words

●

Page Read/Program

–

Random access:

12µs (3V)/15µs (1.8V) (max)

–

Sequential access:

30ns (3V)/50ns (1.8V) (min)

–

Page Program time: 200µs (typ)

●

Copy Back Program mode

●

Fast Block Erase: 2ms (Typ)

●

Status Register

●

Electronic Signature

●

Chip Enable ‘don’t care’

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Serial Number option

●

Hardware Data Protection

–

Program/Erase locked during Power

transitions

●

Data integrity

–

100,000 Program/Erase cycles (with

ECC)

–

10 years Data Retention

●

ECOPACK® packages

●

Development tools

–

Error Correction Code models

–

Bad Blocks Management and Wear

Leveling algorithms

–

Hardware simulation models

FBGA

TSOP48 12 x 20mm

VFBGA55 8 x 10 x 1mm

VFBGA63 9 x 11 x 1mm

Table 1.

Device summary

Reference

Part Number

NAND512-A2C

NAND512R3A2C

NAND512R4A2C(1)

NAND512W3A2C

NAND512W4A2C(1)

1. x16 organization only available for MCP.

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