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APM4550KC-TRL Datasheet(PDF) 3 Page - Anpec Electronics Coropration |
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APM4550KC-TRL Datasheet(HTML) 3 Page - Anpec Electronics Coropration |
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3 / 13 page  Copyright © ANPEC Electronics Corp. Rev. A.1 - May, 2007 www.anpec.com.tw 3 APM4550K Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Electrical Characteristics (Cont.) (T A = 25°C unless otherwise noted) APM4550K Symbol Parameter Test Condition Min. Typ. Max. Unit Diode Characteristics ISD=2.5A, VGS=0V N-Ch 0.8 1.3 VSD a Diode Forward Voltage ISD=-2A, VGS=0V P-Ch -0.8 -1.3 V N-Ch 8 trr Reverse Recovery Time P-Ch 13 ns N-Ch 3 Qrr Reverse Recovery Charge N-Channel ISD=7A, dlSD/dt=100A/ µs N-Channel ISD=-5A, dlSD/dt=100A/ µs P-Ch 5 nC Dynamic Characteristics b N-Ch 2 RG Gate Resistance VGS=0V,VDS=0V,F=1MHz P-Ch 8.3 Ω N-Ch 620 Ciss Input Capacitance P-Ch 590 N-Ch 85 Coss Output Capacitance P-Ch 95 N-Ch 65 Crss Reverse Transfer Capacitance N-Channel VGS=0V, VDS=15V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-15V, Frequency=1.0MHz P-Ch 70 pF N-Ch 6 11 td(ON) Turn-on Delay Time P-Ch 5 9 N-Ch 10 18 Tr Turn-on Rise Time P-Ch 12 23 N-Ch 22 41 td(OFF) Turn-off Delay Time P-Ch 27 50 N-Ch 3 6 Tf Turn-off Fall Time N-Channel VDD=15V, RL=15 Ω, IDS=1A, VGEN=10V, RG=6 Ω P-Channel VDD=-15V, RL=15 Ω, IDS=-1A, VGEN=-10V, RG=6 Ω P-Ch 13 24 ns Gate Charge Characteristics b N-Ch 14 19 Qg Total Gate Charge P-Ch 11 15 N-Ch 1.4 Qgs Gate-Source Charge P-Ch 1.3 N-Ch 2.6 Qgd Gate-Drain Charge N-Channel VDS=15V, VGS=10V, IDS=7A P-Channel VDS=-15V, VGS=-10V, IDS=-5A P-Ch 2.7 nC |
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