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TDA8510 Datasheet(PDF) 8 Page - NXP Semiconductors |
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TDA8510 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 1999 Dec 14 8 Philips Semiconductors Preliminary specification 26 W BTL and 2 × 13 W SE power amplifiers TDA8510J DC CHARACTERISTICS VP =15V; Tamb =25 °C; measured in Fig.7; unless otherwise specified. Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. Only for BTL channel (V12-10). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 6 15 18 V Iq(tot) total quiescent current − 80 160 mA VO DC output voltage − 6.9 − V ∆V OO DC output offset voltage note 2 −− 150 mV Mode select switch VSW(on) switch-on voltage level 8.5 −− V MUTE CONDITION Vmute mute voltage 3.3 − 6.4 V VO output voltage in mute position VI(max) =1V; f=1kHz −− 2mV ∆VOO DC output offset voltage note 2 −− 150 mV STANDBY CONDITION Vstb standby voltage 0 − 2V Istb standby current −− 100 µA Isw(on) switch-on current − 12 40 µA Diagnostic output (pin 16) VDIAG diagnostic output voltage any short-circuit or clipping −− 0.6 V |
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