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MTD20N06HDLT4 Datasheet(PDF) 2 Page - ON Semiconductor |
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MTD20N06HDLT4 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MTD20N06HDL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 − − 25 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 10 100 mAdc Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 6.0 2.0 − Vdc mV/°C Static Drain−Source On−Resistance (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 10 Adc) RDS(on) − − 0.045 0.037 0.070 0.045 W Drain−Source On−Voltage (VGS = 5.0 Vdc) (ID = 20 Adc) (ID = 10 Adc, TJ = 125°C) VDS(on) − − 0.76 − 1.2 1.1 Vdc Forward Transconductance (VDS = 4.0 Vdc, ID = 10 Adc) gFS 6.0 12 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 863 1232 pF Output Capacitance Coss − 216 300 Reverse Transfer Capacitance Crss − 53 73 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time (VDS = 30 Vdc, ID = 20 Adc, VGS = 5.0 Vdc, RG = 9.1 W) td(on) − 11 15 ns Rise Time tr − 151 190 Turn−Off Delay Time td(off) − 34 35 Fall Time tf − 75 98 Gate Charge (VDS = 48 Vdc, ID = 20 Adc, VGS = 5.0 Vdc) QT − 14.6 22 nC Q1 − 3.25 − Q2 − 7.75 − Q3 − 7.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.95 0.88 1.1 − Vdc Reverse Recovery Time (IS = 20 Adc, dIS/dt = 100 A/ms) trr − 22 − ns ta − 12 − tb − 34 − Reverse Recovery Stored Charge QRR − 0.049 − mC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 7.5 − nH 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. |
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