MTD20N06HDLT4 datasheet(2/8 Pages) ONSEMI

Part #	MTD20N06HDLT4

Description	Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK

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MTD20N06HDL

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

−

25

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

10

100

mAdc

Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

6.0

2.0

−

Vdc

mV/°C

Static Drain−Source On−Resistance

(VGS = 4.0 Vdc, ID = 10 Adc)

(VGS = 5.0 Vdc, ID = 10 Adc)

RDS(on)

−

0.045

0.037

0.070

0.045

W

Drain−Source On−Voltage (VGS = 5.0 Vdc)

(ID = 20 Adc)

(ID = 10 Adc, TJ = 125°C)

VDS(on)

−

0.76

−

1.2

1.1

Vdc

Forward Transconductance (VDS = 4.0 Vdc, ID = 10 Adc)

gFS

6.0

12

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

863

1232

pF

Output Capacitance

Coss

−

216

300

Reverse Transfer Capacitance

Crss

−

53

73

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(VDS = 30 Vdc, ID = 20 Adc,

VGS = 5.0 Vdc, RG = 9.1 W)

td(on)

−

11

15

ns

Rise Time

tr

−

151

190

Turn−Off Delay Time

td(off)

−

34

35

Fall Time

tf

−

75

98

Gate Charge

(VDS = 48 Vdc, ID = 20 Adc,

VGS = 5.0 Vdc)

QT

−

14.6

22

nC

Q1

−

3.25

−

Q2

−

7.75

−

Q3

−

7.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.95

0.88

1.1

−

Vdc

Reverse Recovery Time

(IS = 20 Adc, dIS/dt = 100 A/ms)

trr

−

22

−

ns

ta

−

12

−

tb

−

34

−

Reverse Recovery Stored Charge

QRR

−

0.049

−

mC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

−

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

LS

−

7.5

−

nH

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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