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MCP1700-1202ETO Datasheet(PDF) 3 Page - Microchip Technology |
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MCP1700-1202ETO Datasheet(HTML) 3 Page - Microchip Technology |
3 / 24 page © 2007 Microchip Technology Inc. DS21826B-page 3 MCP1700 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDD............................................................................................+6.5V All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V) Peak Output Current .................................... Internally Limited Storage temperature .....................................-65°C to +150°C Maximum Junction Temperature................................... 150°C Operating Junction Temperature...................-40°C to +125°C ESD protection on all pins (HBM;MM) ............... ≥ 4kV; ≥ 400V † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Characteristics: Unless otherwise specified, all limits are established for VIN =VR +1, ILOAD = 100 µA, COUT =1µF (X7R), CIN =1µF (X7R), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C. Parameters Sym Min Typ Max Units Conditions Input / Output Characteristics Input Operating Voltage VIN 2.3 — 6.0 V Note 1 Input Quiescent Current Iq —1.6 4 µA IL =0mA, VIN =VR +1V Maximum Output Current IOUT_mA 250 200 — — — — mA For VR ≥ 2.5V For VR < 2.5V Output Short Circuit Current IOUT_SC — 408 — mA VIN =VR +V, VOUT =GND, Current (peak current) measured 10 ms after short is applied. Output Voltage Regulation VOUT VR-3.0% VR-2.0% VR±0.4 % VR+3.0% VR+2.0% V Note 2 VOUT Temperature Coefficient TCVOUT — 50 — ppm/°C Note 3 Line Regulation ΔVOUT/ (VOUTXΔVIN) -1.0 ±0.75 +1.0 %/V (VR+1)V ≤ VIN ≤ 6V Load Regulation ΔVOUT/VOUT -1.5 ±1.0 +1.5 %IL = 0.1 mA to 250 mA for VR ≥ 2.5V IL = 0.1 mA to 200 mA for VR < 2.5V Note 4 Dropout Voltage VR > 2.5V VIN-VOUT — 178 350 mV IL = 250 mA, (Note 1, Note 5) Dropout Voltage VR < 2.5V VIN-VOUT — 150 350 mV IL = 200 mA, (Note 1, Note 5) Output Rise Time TR — 500 — µs 10% VR to 90% VR VIN = 0V to 6V, RL =50Ω resistive Output Noise eN —3 — µV/(Hz)1/2 IL = 100 mA, f = 1 kHz, COUT =1µF Note 1: The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT. 2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The input voltage (VIN =VR + 1.0V); IOUT = 100 µA. 3: TCVOUT = (VOUT-HIGH -VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. 4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with a VR + 1V differential applied. 6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability. 7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant. |
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