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UL631H256SK35 Datasheet(PDF) 1 Page - Simtek Corporation |
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UL631H256SK35 Datasheet(HTML) 1 Page - Simtek Corporation |
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1 / 13 page  UL631H256 Obsolete - Not Recommended for New Designs 1 March 31, 2006 STK Control #ML0057 Rev 1.0 SimtekLow Voltage SoftStore 32K x 8 nvSRAM The UL631H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disab- led. The UL631H256 is a fast static RAM (35 and 45 ns), with a nonvo- latile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resi- des in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through software sequences. The UL631H256 combines the high performance and ease of use of a fast SRAM with nonvolatile data integrity. Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed. Because a sequence of addresses is used for STORE initiation, it is important that no other read or write accesses intervene in the sequence or the sequence will be aborted. Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvola- tile information is transferred into the SRAM cells. The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data can be recalled an unlimited number of times. The UL631H256 is pin compatible with standard SRAMs. • High-performance CMOS non- volatile static RAM 32768 x 8 bits • 35 and 45 ns Access Times • 15 and 20 ns Output Enable Access Times • Software STORE Initiation • Automatic STORE Timing • 106 STORE cycles to EEPROM • 100 years data retention in EEPROM • Automatic RECALL on Power Up • Software RECALL Initiation • Unlimited RECALL cycles from EEPROM • Unlimited Read and Write to SRAM • Wide voltage range: 2.7 ... 3.6 V (3.0 ... 3.6 V for 35 ns type) • Operating temperature range: 0 to 70 °C -40 to 85 °C • QS 9000 Quality Standard • RoHS compliance and Pb- free • ESD protection > 2000 V (MIL STD 883C M3015.7-HBM) • Package: SOP28 (330 mil) Pin Configuration Pin Description Signal Name Signal Description A0 - A14 Address Inputs DQ0 - DQ7 Data In/Out E Chip Enable G Output Enable W Write Enable VCC Power Supply Voltage VSS Ground A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SOP Top View 28 27 26 25 24 23 22 21 20 19 18 17 16 15 G A11 A9 A8 A13 W n. c. VCC n. c. A14 A12 A7 A6 A5 A4 A3 n.c. A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 n.c. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 TSOP Top View 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Features Description |
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