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U635H64BS2K25 Datasheet(PDF) 2 Page - Simtek Corporation |
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U635H64BS2K25 Datasheet(HTML) 2 Page - Simtek Corporation |
2 / 14 page U635H64 2 March 31, 2006 STK Control #ML0052 Rev 1.0 Block Diagram Operating Mode E W G DQ0 - DQ7 Standby/not selected H ** High-Z Internal Read L H H High-Z Read L H L Data Outputs Low-Z Write L L * Data Inputs High-Z Truth Table for SRAM Operations a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Absolute Maximum Ratingsa Symbol Min. Max. Unit Power Supply Voltage VCC -0.5 7 V Input Voltage VI -0.3 VCC+0.5 V Output Voltage VO -0.3 VCC+0.5 V Power Dissipation PD 1W Operating Temperature C-Type K-Type Ta 0 -40 70 85 °C °C Storage Temperature Tstg -65 150 °C Characteristics All voltages are referenced to VSS = 0 V (ground). All characteristics are valid in the power supply voltage range and in the operating temperature range specified. Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of V I, as well as input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V, with the exception of the tdis-times and ten-times, in which cases transition is measured ± 200 mV from steady-state voltage. * H or L EEPROM Array 128 x (64 x 8) STORE RECALL SRAM Array 128 Rows x 64 x 8 Columns A5 A6 A7 A8 A9 A11 A12 A0 - A12 Store/ Recall Control VCC VSS G E W Software Detect Power Control VCC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 Column I/O Column Decoder A0 A1 A2 A3 A4 A10 |
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