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U635H64BSC45 Datasheet(PDF) 4 Page - Simtek Corporation |
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U635H64BSC45 Datasheet(HTML) 4 Page - Simtek Corporation |
4 / 14 page U635H64 4 March 31, 2006 STK Control #ML0052 Rev 1.0 DC Characteristics Symbol Conditions C-Type K-Type Unit Min. Max. Min. Max. Output High Voltage Output Low Voltage VOH VOL VCC IOH IOL = 4.5 V =-4 mA = 8 mA 2.4 0.4 2.4 0.4 V V Output High Current Output Low Current IOH IOL VCC VOH VOL = 4.5 V = 2.4 V = 0.4 V 8 -4 8 -4 mA mA Input Leakage Current High Low IIH IIL VCC VIH VIL = 5.5 V = 5.5 V = 0 V -1 1 -1 1 μA μA Output Leakage Current High at Three-State- Output Low at Three-State- Output IOHZ IOLZ VCC VOH VOL = 5.5 V = 5.5 V = 0 V -1 1 -1 1 μA μA SRAM Memory Operations No. Switching Characteristics Read Cycle Symbol 25 35 45 Unit Alt. IEC Min. Max. Min. Max. Min. Max. 1 Read Cycle Timef tAVAV tcR 25 35 45 ns 2 Address Access Time to Data Validg tAVQV ta(A) 25 35 45 ns 3 Chip Enable Access Time to Data Valid tELQV ta(E) 25 35 45 ns 4 Output Enable Access Time to Data Valid tGLQV ta(G) 12 20 25 ns 5E HIGH to Output in High-Zh tEHQZ tdis(E) 13 17 20 ns 6G HIGH to Output in High-Zh tGHQZ tdis(G) 13 17 20 ns 7E LOW to Output in Low-Z tELQX ten(E) 55 5 ns 8G LOW to Output in Low-Z tGLQX ten(G) 00 0 ns 9 Output Hold Time after Address Change tAXQX tv(A) 33 3 ns 10 Chip Enable to Power Activee tELICCH tPU 00 0 ns 11 Chip Disable to Power Standbyd, e tEHICCL tPD 25 35 45 ns e: Parameter guaranteed but not tested. f: Device is continuously selected with E and G both LOW. g: Address valid prior to or coincident with E transition LOW. h: Measured ± 200 mV from steady state output voltage. |
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