GBG640CT datasheet(1/3 Pages) GTM

Part #	GBG640CT

Description	low voltage, high frequency inverter,

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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G

G B

B G

G 664400C

C T

T

Description

The GBG640CT is designed for low voltage, high frequency inverter, free wheeling, and polarity protection application.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

2.20

2.80

K

0

0.15

E

2.30 REF.

L

0.90

1.50

F

0.70

0.90

M

5.40

5.80

S

0.60

0.90

R

0.80

1.20

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

-40~+125

Storage Temperature

Tstg

-40~+125

Typical Thermal Resistance Junction to Case

R JC

6.0

/W

Peak Repetitive Forward Current, Tc = 125 :

(Rated VR, Square Wave,20 kHz) Per Diode

IFRM

6

A

Reverse Leakage Current @ Tj = 25 :

VR= 40V

0.3

mA

Reverse Leakage Current @ Tj = 125 :

VR=40V

IRM

20

mA

Forward Voltage Drop @ IF = 3.0A , Tj = 25 :

0.55

V

Forward Voltage Drop @ IF = 3.0A , Tj = 125 :

VFM

0.49

V

Non-Repetitive Peak Forward Surge Current 5us

Single half Sine-wave superimposed on rated load

490

A

Non-Repetitive Peak Forward Surge Current 10ms

Single half Sine-wave superimposed on rated load

IFSM

75

A

Peak Repetitive Reverse Surge Current(2us,1kHz)

IRRM

1

A

Rectangular waveform

IF

6

A

RMS Reverse Voltage

VR(RMS)

V

Peak Repetitive Reverse Voltage

VRRM

40

V

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