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GE630 Datasheet(PDF) 2 Page - GTM CORPORATION |
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GE630 Datasheet(HTML) 2 Page - GTM CORPORATION |
2 / 5 page GE630 Page: 2/5 ISSUED DATE :2005/06/24 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 200 - - V VGS=0, ID=1mA Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.248 - V/ : Reference to 25 : , ID=1mA Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 40 - S VDS=10V, ID=5A Gate-Source Leakage Current IGSS - - D100 nA VGS= D30V Drain-Source Leakage Current(Tj=25 : ) - - 10 uA VDS=200V, VGS=0 Drain-Source Leakage Current(Tj=150 : ) IDSS - - 100 uA VDS=160V, VGS=0 Static Drain-Source On-Resistance RDS(ON) - - 400 m Ł VGS=10V, ID=5A Total Gate Charge3 Qg - 25 - Gate-Source Charge Qgs - 3.6 - Gate-Drain (“Miller”) Change Qgd - 14 - nC ID=9A VDS=160V VGS=10V Turn-on Delay Time3 Td(on) - 8 - Rise Time Tr - 26 - Turn-off Delay Time Td(off) - 34 - Fall Time Tf - 22 - ns VDS=100V ID=9A VGS=10V RG=10 Ł RD=11 Ł Input Capacitance Ciss - 515 - Output Capacitance Coss - 90 - Reverse Transfer Capacitance Crss - 40 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage3 VSD - - 1.3 V IS=9A, VGS=0V, Tj=25 : Continuous Source Current (Body Diode) IS - - 9 A VD=VG=0V, VS=1.3V Pulsed Source Current (Body Diode) 1 ISM - - 36 A Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=4.5mH, RG=25 Ł , IAS=9A. 3. Pulse width 300us, duty cycle 2%. |
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