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• High Output Power: 40mW (CW) , 60mW (Pulse)

• Visible Light: 660nm (typ.)

-

Symbol

Parameter

Conditions

Ratings

Unit

Po

Light output power

CW

45

mW

Pulse(Note 2)

60

VRL

Reverse voltage

2

V

-

Tc

Case temperature

-10

Tstg

Storage temperature

-

-40

High-Density Optical Disc Drives

DVD(Digital Versatile Disc)-RAM Drive

as of December '99

Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does

not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor

Quality Assurance Department.

Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1

µs

ML1XX8 is a high power AlGaInP semiconductor laser

which provides a stable, single transverse mode

oscillation

with emission wavelength of 660-nm and standard CW light

output of 40mW.

ML1XX8 has a window-mirror-facet which improves the

maximum output power.

That leads to highly reliable and

high-power operation.

°C

°C

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Ith

Threshold current

CW

-

57

mA

Iop

Operating current

CW,Po=40mW

-

117

mA

Slope efficiency

CW,Po=40mW

-0.67

-

mW/mA

Peak wavelength

CW,Po=40mW

660

nm

Beam divergence angle

(parallel)

CW,Po=40mW

8.5

°

Beam divergence angle

(perpendicular)

CW,Po=40mW

22

°

Vop

Operating voltage

CW,Po=40mW

2.5

V

666

-

655

-

-

--

--

η

3.0

ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25

°C)

MITSUBISHI

ELECTRIC

TYPE

NAME

DESCRIPTION

APPLICATION

ML1XX8 SERIES

FOR OPTICAL INFORMATION SYSTEMS

ML101J8, ML120G8

MITSUBISHI LASER DIODES

FEATURES