GJ9971

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ISSUED DATE :2005/07/21

REVISED DATE :

G

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ9971 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Low On-resistance

*Simple Drive Requirement

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

2.40

3.00

K

0

0.15

E

2.30 REF.

L

0.90

1.50

F

0.70

0.90

M

5.40

5.80

S

0.60

0.90

R

0.80

1.20

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

25

A

16

A

80

A

Total Power Dissipation

39

W

Linear Derating Factor

0.31

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-c

3.2

: /W

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

: /W

60V

36m

25A

Pb Free Plating Product

TO-252