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LH28F008SCHR-L12 Datasheet(PDF) 6 Page - Sharp Corporation |
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LH28F008SCHR-L12 Datasheet(HTML) 6 Page - Sharp Corporation |
6 / 55 page LHF08CH1 3 Rev. 1.3 1 INTRODUCTION This datasheet contains LH28F008SCT-L85 specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications. LH28F008SCT-L85 Flash memory documentation also includes application notes and design tools which are referenced in Section 7. 1.1 New Features The LH28F008SCT-L85 SmartVoltage Flash memory maintains backwards-compatibility with SHARP’s 28F008SA. Key enhancements over the 28F008SA include: •SmartVoltage Technology •Enhanced Suspend Capabilities •In-System Block Locking Both devices share a compatible pinout, status register, and software command set. These similarities enable a clean upgrade from the 28F008SA to LH28F008SCT-L85. When upgrading, it is important to note the following differences: •Because of new feature support, the two devices have different device codes. This allows for software optimization. •V PPLK has been lowered from 6.5V to 1.5V to support 3.3V and 5V block erase, byte write, and lock-bit configuration operations. The VPP voltage transitions to GND is recommended for designs that switch VPP off during read operation. •To take advantage of SmartVoltage technology, allow VPP connection to 3.3V or 5V. 1.2 Product Overview The LH28F008SCT-L85 is a high-performance 8M-bit SmartVoltage Flash memory organized as 1M-byte of 8 bits. The 1M-byte of data is arranged in sixteen 64K-byte blocks which are individually erasable, lockable, and unlockable in-system. The memory map is shown in Figure 3. SmartVoltage technology provides a choice of VCC and VPP combinations, as shown in Table 1, to meet system performance and power expectations. 2.7V VCC consumes approximately one-fifth the power of 5V VCC. But, 5V VCC provides the highest read performance. VPP at 3.3V and 5V eliminates the need for a separate 12V converter, while VPP=12V maximizes block erase and byte write performance. In addition to flexible erase and program voltages, the dedicated VPP pin gives complete data protection when VPP≤VPPLK. Table 1. VCC and VPP Voltage Combinations Offered by SmartVoltage Technology VCC Voltage VPP Voltage 2.7V(1) 3.3V 3.3V, 5V, 12V 5V 5V, 12V NOTE: 1. Block erase, byte write and lock-bit configuration operations with VCC<3.0V are not supported. Internal VCC and VPP detection Circuitry automatically configures the device for optimized read and write operations. A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase, byte write, and lock-bit configuration operations. A block erase operation erases one of the device’s 64K-byte blocks typically within 0.3s (5V VCC, 12V VPP) independent of other blocks. Each block can be independently erased 100,000 times (1.6 million block erases per device). Block erase suspend mode allows system software to suspend block erase to read or write data from any other block. Writing memory data is performed in byte increments typically within 6µs (5V VCC, 12V VPP). Byte write suspend mode enables the system to read data or execute code from any other flash memory array location. sharp |
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