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IRG4BC30SS Datasheet(PDF) 1 Page - International Rectifier

Part # IRG4BC30SS
Description  INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC30SS Datasheet(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
34
IC @ TC = 100°C
Continuous Collector Current
18
A
ICM
Pulsed Collector Current

68
ILM
Clamped Inductive Load Current
‚
68
VGE
Gate-to-Emitter Voltage
±20
V
EARV
Reverse Voltage Avalanche Energy
ƒ
10
mJ
PD @ TC = 25°C
Maximum Power Dissipation
100
PD @ TC = 100°C
Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )
IRG4BC30S-SPbF
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tight
parameter distribution and high efficiency
• Lead-Free
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
Benefits
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.2
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient, typical socket mount
–––
40
Wt
Weight
1.44
–––
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
8/30/04
www.irf.com
1
D2Pak
PD - 95786


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