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IRG4BC30SS Datasheet(PDF) 1 Page - International Rectifier |
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IRG4BC30SS Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 34 IC @ TC = 100°C Continuous Collector Current 18 A ICM Pulsed Collector Current 68 ILM Clamped Inductive Load Current 68 VGE Gate-to-Emitter Voltage ±20 V EARV Reverse Voltage Avalanche Energy 10 mJ PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR E C G n-channel Features • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency • Lead-Free • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions Benefits VCES = 600V VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.2 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 1.44 ––– g (oz) Thermal Resistance Absolute Maximum Ratings W 8/30/04 www.irf.com 1 D2Pak PD - 95786 |
Similar Part No. - IRG4BC30SS_04 |
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Similar Description - IRG4BC30SS_04 |
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