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TDF5242T Datasheet(PDF) 10 Page - NXP Semiconductors |
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TDF5242T Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 20 page 1997 Sep 12 10 Philips Semiconductors Preliminary specification Brushless DC motor drive circuit TDF5242T CHARACTERISTICS VP = 14.5 V ±10%; Tamb = −40 to +85 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 4 − 18 V IP supply current note 2 − 5.2 6.25 mA VVMOT input voltage to the output driver stages see Fig.1 3 − 18 V Thermal protection TSD temperature at temperature sensor causing shut-down 130 140 150 °C ∆T decrease in temperature before switch-on after shut-down − TSD − 30 − K COMP-A, COMP-B, COMP-C and MOT0 VI input voltage −0.5 − VVMOT V II input bias current 0.5V<VI <VVMOT − 1.5 V −10 − 0 µA VCSW comparator switching level note 3 ±20 ±25 ±30 mV ∆VCSW variation in comparator switching levels −3 0 +3 mV Vhys comparator input hysteresis Tamb =25 °C − 75 −µV OUT-NA, OUT-NB, OUT-NC, OUT-PA, OUT-PB and OUT-PC VO(n) n-channel driver output voltage upper transistor; IO = −100 mA; Tamb =25 °C −1.05 −− V lower transistor; IO = 10 mA; Tamb =25 °C −− 0.35 V VO(p) p-channel driver output voltage upper transistor; IO = −10 mA; Tamb =25 °C −1.05 −− V lower transistor; IO = 100 mA; Tamb =25 °C −− 0.35 V ∆V OL variation in saturation voltage between lower transistors IO = 100 mA; Tamb =25 °C −− 180 mV ∆VOH variation in saturation voltage between upper transistors IO = −100 mA; Tamb =25 °C −− 180 mV ILIM current limiting lower transistor; RO =47 Ω 150 180 250 mA +AMP IN and −AMP IN VI input voltage −0.3 − VP − 1.7 V differential mode voltage without ‘latch-up’ −− ±V P V Ib input bias current Tamb =25 °C −− 650 nA CI input capacitance Tamb =25 °C − 4 − pF Voffset input offset voltage −− 10 mV |
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