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GSC4835 Datasheet(PDF) 2 Page - GTM CORPORATION |
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GSC4835 Datasheet(HTML) 2 Page - GTM CORPORATION |
2 / 4 page GSC4835 Page: 2/4 ISSUED DATE :2006/04/20 REVISED DATE : Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.02 - V/ : Reference to 25 : , ID=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 14 - S VDS=-10V, ID=-9A Gate-Source Leakage Current IGSS - - ±100 nA VGS=±25V Drain-Source Leakage Current(Tj=25 : ) - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - -25 uA VDS=-24V, VGS=0 - 16.5 20 VGS=-10V, ID=-9A Static Drain-Source On-Resistance2 RDS(ON) - 30 35 m VGS=-4.5V, ID=-6A Total Gate Charge2 Qg - 23 37 Gate-Source Charge Qgs - 4 - Gate-Drain (“Miller”) Change Qgd - 16 - nC ID=-9A VDS=-25V VGS=-4.5V Turn-on Delay Time2 Td(on) - 13 - Rise Time Tr - 10 - Turn-off Delay Time Td(off) - 48 - Fall Time Tf - 46 - ns VDS=-15V ID=-1A VGS=-10V RG=3.3 RD=15 Input Capacitance Ciss - 1170 1870 Output Capacitance Coss - 415 - Reverse Transfer Capacitance Crss - 340 - pF VGS=0V VDS=-25V f=1.0MHz Gate Resistance Rg - 8 12 f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-2.1A, VGS=0V Reverse Recovery Time Trr - 40 - ns Reverse Recovery Charge Qrr - 30 - nC IS=-9A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 125 /W when mounted on Min. copper pad. : |
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